| 摘要 |
PROBLEM TO BE SOLVED: To suppress dispersion of quantity of ion implantation caused by variability of the thickness of remaining film on a substrate (gate electrode). SOLUTION: In a semiconductor device in which an ion implantation process for ROM writing is performed after an interlayer insulating film is formed in order to shorten a TAT(turn around time), an etching stopper film consisting of a polysilicon film 12 acting as the bottom part of a through hole 20 for ion implantation lies at least at a desired position of the interlayer insulating film formed on a transistor 6 region where ROM writing is performed. |
