发明名称 AMPLIFYING SOLID STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To uniform the incident light amount at a central part and peripheral part of a chip even with a large step between a photodiode surface and a metal film forming an opening, to provide the same sensitivity both at the central part and the peripheral part of the chip. SOLUTION: A CMOS sensor comprises, on a semiconductor substrate, an imaging region wherein a photodiode and a unit cell comprising a signal scanning circuit part are arrayed in 2-dimension and a signal line for reading the signal from each cell in the imaging region. Here, the center position of an opening region of a metal film 26 which specifies a region of a photodiode 22 which is irradiated with light is deviated to the center side of the chip relative to the center position of each corresponding photodiode 22.
申请公布号 JP2000150849(A) 申请公布日期 2000.05.30
申请号 JP19980320589 申请日期 1998.11.11
申请人 TOSHIBA CORP 发明人 YAMAGUCHI TETSUYA;IHARA HISANORI;ISHIWATARI HIROAKI;MORI TERUKO
分类号 H01L27/14;H01L27/146;H01L31/0216;H04N5/335;H04N5/361;H04N5/365;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H01L27/146 主分类号 H01L27/14
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