MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the occurrence of whisker on the surface of aluminum or aluminum alloy can be prevented by burying in a through hole an aluminum or an aluminum alloy which is useful as a wiring material. SOLUTION: This manufacturing method for semiconductor device includes the following steps: (a) a contact hole 32 is formed in an interlayer insulation layer (silicon oxide film 20 and BPSG silm 30) formed on a semiconductor substrate 11 containing elements; (b) first and second aluminum films 34 and 35 made of aluminum or alloy made mainly of aluminum are formed on the interlayer insulation film 32 and contact hole 32; (c) the second aluminum film 35 is cooled slowly.