| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously create capacity and TFT on a semiconductor thin film, at the same time, to increase a capacity value, and to stabilize TFT characteristics. SOLUTION: A protection film 13 and a reflection prevention film 12 are formed on a semiconductor thin film 3, and each thickness is separately set, thus forming a Poly-Si film with superior uniformity and a Poly-Si film with large surface area on the semiconductor thin film under the protection film and under the reflection protection film, respectively, when a laser beam is applied. After that, a TFT and capacity are created on the Poly-Si film with superior uniformity and the Poly-Si film with large surface area, respectively.
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