Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method

摘要

A method for producing a polycrystalline silicon structure and a polycrystalline silicon layer to be produced by the method of first forming a primary silicon structure in an amorphous or polycrystalline form, and doping the structure with a dopant, in particular with oxygen, in a concentration exceeding the solubility limit. In a subsequent heat treatment, dopant precipitations are formed which control grain growth in a secondary structure being produced. Such a contact polycrystalline silicon structure can be used, in particular, as a connection of a monocrystalline silicon region.