| 摘要 |
To form a thin film of ferroelectric substance by sol-gel method, there is provided a process for obtaining a precursor solution from which a coating solution enabling to form a thin film having a film thickness enough to exhibit its property can be obtained just by one coating operation without any multi-coating. After composing a Ti alkoxide oligomer having a cyclic structure or a ladder structure by hydrolysis and poly-condensation of a Ti alkoxide and composing a Zr alkoxide oligomer by hydrolysis and polycondensation of a Zr alkoxide, the Ti alkoxide oligomer is preliminarily hydrolyzed and reacted with the Zr alkoxide oligomer, whereby a Ti-O-Zr precursor is obtained, and a Pb(Ti-O-Zr) is obtained by reacting the Ti-O-Zr precursor with the Pb alkoxide. |
