| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of a semiconductor device by preventing the occurrence of such a problem as the dishing or erosion of a groove area and an interlayer insulating film and, at the same time, by increasing the operating speed of a circuit and saving the power consumption of the circuit. SOLUTION: A semiconductor device is provided with a semiconductor substrate 101, a plurality of active areasαandβfor forming semiconductor elements formed on the surface of the substrate 101, and an element isolating area composed of a groove area which isolates the active areasαandβfrom each other and is filled up with an insulating film and pseudo active areas a-f formed adjacently to the groove area. The device is also provided with wiring layers 123a-123c formed above the substrate 101 and pseudo conductive films 112b-112f formed on the element separating area. The pseudo conductive films 112b and 112c which are partially or entirely arranged below the wiring layers 123a-123c are only formed on the groove area 124.
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