| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistance and to form an electrode that can be subjected to patterning easily by forming a lower electrode on a substrate with at least double-layer metal film, forming a second metal film at the side of a dielectric thin film as a precious metal, and at the same time forming a first metal film at the substrate side as a low-resistance metal film with a specific resistance or less. SOLUTION: A lower electrode consisting of a first metal film 12 and a second metal film 13 is formed on an Si wafer with a thermal oxide film by the DC magnetron sputtering method, low-resistance metal such as tungsten, molybdenum, and cobalt that is approximately 5×10-6Ω.cm is used as the first metal film 12, and a precious metal such as platinum, iridium, and ruthenium is used as the second metal film 13. Then, a dielectric thin film 15 is formed on such lower electrode by the sol/gel method, and a platinum molybdenum film is deposited on such dielectric thin film 15 by the DC magnetron sputtering method, thus forming an upper electrode 16 and manufacturing an electrode with less resistance and easy patterning.
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