发明名称 SWITCHED CONNECTION FILM, MAGNETORESISTIVE EFFECT ELEMENT, MAGNETORESISTIVE EFFECT HEAD AND MANUFACTURE OF THE SWITCHED CONNECTION FILM
摘要 PROBLEM TO BE SOLVED: To provide a switched connection film which is thermally stable and has large MR ratio, and a manufacturing method of a magnetoresistive effect element, a magnetoresistive effect head and a switched connection film. SOLUTION: A switched connection film 100 contains a ferromagnetic material layer 3 and a magnetization rotation restraining layer, which is arranged in the vicinity of the ferromagnetic material layer 3 in order to prevent magnetization rotation of the ferromagnetic material layer 3. The magnetization rotation restraining layer contains a (AB)2Ox layer 2, where O is oxygen atom and satisfies the condition 2.8<x<3.2, when ion radii of atom A, atom B and atom C are set as Ra, Rb and Ro, respectively, t which is defined by formula t=(Ra+ Ro)/(√2.(Ra+Ro)) satisfies the condition 0.8<t<0.97.
申请公布号 JP2000150236(A) 申请公布日期 2000.05.30
申请号 JP19990007069 申请日期 1999.01.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAKAKIMA HIROSHI;HIROTA EIICHI;KAWAWAKE YASUHIRO;SATOMI MITSUO;SUGITA YASUNARI
分类号 G11B5/39;H01F10/16;H01F10/26;H01F10/32;H01L43/08;(IPC1-7):H01F10/26 主分类号 G11B5/39
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