| 摘要 |
PROBLEM TO BE SOLVED: To provide a low pressure CVD device by which a BSG film with uniform boron concentration is formed on the surface of a semiconductor wafer without using a dispersion nozzle, and a method by which a BSG film with uniform boron concentration can be formed with good reproducibility by using a CVD device. SOLUTION: A low pressure CVD device 20 has a boat 4 holding a plurality of wafers 10 to be treated, a reaction furnace in which the boat 4 is housed, a heater 5 which is provided around the reaction furnace and heats atmosphere in the reaction furnace, and gas introducing pipes 2 and 3 through which reactive gas is introduced into the reaction furnace. In a manufacturing method which employs a CVD device 20 to form boron silicate glass(BSG) thin films on the wafers 10 to be treated, source gas containing not less than 4% wt.ratio of boron (B) is supplied through the gas introducing pipes 2 and 3 whose outlets are provided at positions lower than a position where the wafers 10 to be treated are held at 600 deg.C-800 deg.C under 1 Torr-5 Torr.
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