| 摘要 |
PROBLEM TO BE SOLVED: To aim to reduce manufacturing steps of a nonvolatile semiconductor memory device. SOLUTION: A control gate 5 is formed on a field insulating film 2. Then a floating gate 10 is formed on the control gate 5 through an insulating film 7. The floating gate 10 extends from the control gate 5 up to a first gate film 8a. In such a construction, the control gate 5 is formed at the same time with a lower electrode 11 of a capacitor which is formed on an Si substrate 1 in conjunction with an EPROM, and the floating gate 10 is formed at the same time with an upper electrode 11 of the capacitor. Also, a gate oxide film 8b of a MOS transistor which is formed on the Si substrate 1 in conjunction with the EPROM and a first gate film 8a of the EPROM are formed simultaneously. In this way, manufacturing steps can be reduced.
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