SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To improve the realiability of an MISFET(metal insulator semiconductor field effect transistor) comprised of thin insulation film in a semiconductor integrated circuit device which is provided with the MISFET comprised of thin gate insulation film and MISFET comprised of thin gate insulation film. SOLUTION: This semiconductor integrated circuit device is provided with a gate insulation film of an n-channel type MISFET Qn and a p-channel type MISFET Qp which are formed in an area of 1.8 V system, and the gate insulation film comprises a first silicon oxide film 1b with a thickness of about 8 nm and a second silicon oxide film 1b with a thickness of about 4 nm. The first thick silicon oxide film 1a is formed on the end part of an active area 9b in contact with a shallow groove isolation SGI formed in an element isolation area, so that the leak current failure or deterioration of breakdown strength in the gate insulation film can be prevented in the n-channel type MISFET Qn and p-channel type MISFET Qp formed in the area of 1.8 V system.