| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, and a semiconductor device, in which by-product of tungsten hexafluoride gas and ammonia gas is not generated in a film formation chamber or doesn't leave and remain in the film formation chamber even if the by-product is generated. SOLUTION: In a manufacturing method for a semiconductor device, a WF6 gas and an ammonia NH3 gas are fed through a shower head into a chamber to form a WHx film onto a semiconductor wafer(W). Each temperature at each gas contact part in the chamber is made at a given temperature, for example at 120 deg.C, for preventing the by-product (NH4F and compound of NH4F with W atoms) made of WF6 gas and NH3 gas from sticking.
|
