| 摘要 |
PROBLEM TO BE SOLVED: To form variation-less electrodes with high accuracy without using a vapor deposition method, etc., by performing electroless plating in a state where the photovoltaic power generated on silicon wafers is removed. SOLUTION: Silicon wafers W are housed in a rack 31 and the photovoltaic power generated on the wafers W is removed by throwing the rack 31 in a light shielding enclosure through a throwing-in port 10a and interrupting light or reducing the quantity of received light. Then, after the wafers W are washed with water by dipping the wafers W in a water bath 21 together with the rack 31, the natural oxide films formed on the surfaces of the wafers W are removed through acid treatment by appropriately repeatedly dipping the wafers W in a dilute nitric acid bath 22 and a sodium hydroxide bath 21 and again washing the wafers W with water by dipping the wafers W in the water bath 21. Thereafter, the wafers W are subjected to zincate treatment in a zincate bath 24 together with the rack 31 and, continuously, to electroless plating in an Ni bath 25 and an Au bath 26.
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