| 摘要 |
A circuit and method for sensing a memory cell having a plurality of threshold voltages is provided that implements a low power and voltage sensing operation and reduces a multiple level memory cell size by reducing the size of the circuit. The circuit includes a switch for applying or blocking a current to/from a selected memory cell in accordance with a switching control signal inputted into a bit line coupled with the selected memory cell. A current comparison unit compares sizes of a current flowing on the bit line and one reference current to output a result of the comparison. A memory stores the result of the comparison performed by the current comparison unit, and a counter register circuit is provided that has a range corresponding to the number of multiple levels of the memory cell and counts a value that corresponds to stored data in the selected cell.
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