| 摘要 |
PROBLEM TO BE SOLVED: To prevent degradation of characteristics of a device and current leak due to metal contaminants such as copper or a compound of copper adhered to the reverse side of a semiconductor substrate, by forming a copper base metal film on the major surface of the semiconductor substrate after forming a barrier film on the reverse side of the semiconductor substrate. SOLUTION: A barrier film 5 of SiO2 is formed by plasma CVD method on the reverse side of a substrate. A silicon oxide film 9 as interlayer insulating film is successively formed by plasma CVD method on the device forming surface of the substrate. Then, for forming wiring grooves, first, the silicon oxide film 9 is etched by using a mixed gas containing Ar, CO or the like, and then the silicon nitride film 8 is etched by using a CHF3 base gas. After completion of etching, a barrier metal film 11 of Ti and TiN is deposited by sputtering method on the whole surface. A seed metal film of copper on which copper plating is to be grown is successively deposited on it by sputtering. A copper plating film 12 is successively formed by electrolytic plating by immersing the substrate into a copper sulphate solution. |
