| 摘要 |
PROBLEM TO BE SOLVED: To obtain a magnetic tunnel element which can be used for a magneto- resistance memory array by interposing an insulating film between a hard magnetic film and a soft magnetic film and oxidizing the insulating film in a mixed gas of oxygen and ozone. SOLUTION: Lower electrodes 4 each composed of a first Ti conductive film 2 and a second Cu conductive film 3 are formed on an Si substrate 12. Then magnetic tunnel elements 8 each composed of a hard magnetic layer 5, an insulating film 6, and soft magnetic layer 7 are formed by successively forming Co hard magnetic layers 5 having different coercive forces, insulating films 6 which are formed by oxidizing Al films in a mixed gas of oxygen and ozone, and NiFe soft magnetic layers 7 on the electrodes 4. Therefore, a magnetic tunnel element 8 which does not cause resistance fluctuation and can be used for a magneto-resistance memory array can be obtained.
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