| 摘要 |
PROBLEM TO BE SOLVED: To make a gate leading-out part of a display device of a chip on glass(COG) structure low resistance. SOLUTION: On a supporting substrate 1, a Ti thin film 2 of a predetermined pattern is formed as an underlying layer, and an Al film 3 and a Ti thin film 4 are laminated thereon in order, and further the side wall surface of the Al film 3 is coated with a Ti thin film 5, thereby a gate leading-out part 6 is constituted. The Al film 3 is excellent in conductivity, thereby the gate leading- out part 6 is made low resistance. Since the front surface of the Al film 3 is coated and protected by the Ti thin film 2, 4 and 5, the risk that impurities and water content penetrate along the interface between the substrate 1 and the film 3 to contaminate and corrode the Al is removed.
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