| 摘要 |
A lateral DMOST with a drain extension 8 and a source contact entirely which overlaps the gate and thus forms a screen between the gate and the drain. The source contact 15 does not overlap the poly gate 9 but lies entirely laterally of this gate. The gate itself is provided with a low-ohmic metal contact strip 18, which results in a low gate resistance. A metal screening strip 20 is provided between this gate contact strip and the metal drain contact 16, which screening strip is connected to the source contact 15 next to the tips of the contact strip 18. Said screening strip leads to a major improvement in the power gain at high frequencies, for example in the RF range. The screening strip 20 may be realized together with the source, drain, and gate contacts in a common metal layer.
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