| 摘要 |
PROBLEM TO BE SOLVED: To improve conversion efficiency by irradiating a Cd supply layer from above with ion beam containing Cd or elements which form a chalcopyrite system compound, to form a mixing layer of an absorption layer and the Cd supply layer, and then forming a buffer layer thereon. SOLUTION: An Mo film is formed on a substrate to be an Mo electrode 2. Then, using a sputter target of the composition of Cu:In:Ga:Se=1:0.5:0.5:2, a CIGS film is formed by an ion beam sputter method, to be an absorption layer 8. Then a Cd layer is formed on the CIGS layer to be a Cd supply layer 4. These films are irradiated with Ar ion beam from the upper side, to form a mixing layer 5 of the CIGS film and the Cd supply layer 4. Continuously, a CdS film is formed on the mixing layer 5 by a liquid solution precipitation method, to be a buffer layer. Thereby a junction between with the buffer layer is excellently formed, so that a solar battery of high efficiency is manufactured. |
