| 摘要 |
PROBLEM TO BE SOLVED: To furnish a semiconductor-composing element with the combination of a high yield voltage and a high permittivity by providing the energy level of a doping material in a drift-region Fermi energy region. SOLUTION: A semiconductor substrate 1 is provided with P-type ground doping. Source and drain regions 2 and 3 both have N-conductive doping. A drift region 4 follows the drain region 3 as a weak N doping region, thus actually forming the region as one portion of the drain region. Between the source and drift regions 2 and 4, there is a channel region 9. In the drift region 4, in addition to N-type ground doping, Mg can be favorably provided as an additional acceptor doping material. In this case, a concentration of 1,015/cm3-1,016 cm3 can be set as the concentration of the acceptor material. |
