| 摘要 |
PROBLEM TO BE SOLVED: To make the dimension of the whole body of a Hall element nearly equal to that of a mold by forming conductive resin layers on internal electrodes and parts of the side faces of protrusions and covering the partial surfaces of the internal electrodes on which the conductive resin layers and magnetism- sensitive sections are not formed with a protective film. SOLUTION: After an IbSb thin film having electron mobility of 13.000 cm2/V/ sec is formed on an alumxna substrate 1 containing a magnetism-sensitive section 3, a Hall element pattern is formed by using the photolithography method and internal electrodes 2 are formed at four corners of individual semiconductor device by electroless Cu plating. Then conductive resin layers 4 having thicknesses of 50μm are screen-printed across the internal electrodes 2 of adjacent semiconductor devices. Successively, the partial surfaces of the internal electrodes 2 on which the resin layers 4 and magnetism-sensitive section 3 are not formed are covered with a solder resist 5a. Therefore, the dimension of the whole body of a Hall element can be made nearly equal to that of a mold.
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