| 摘要 |
PROBLEM TO BE SOLVED: To simplify the setting operation of high-frequency power supply time by stopping supply of DC voltage, high-frequency power, and heat-transfer gas at the same time, then re-supplying DC voltage and high-frequency power in a specified time, and after that, sequentially stopping supply of DC voltage and high-frequency power. SOLUTION: At releasing a plasma-processed sample, firstly the supply of DC voltage, high-frequency power, and heat-transfer gas is simultaneously stopped. Then the DC voltage and high-frequency power are re-supplied in a specified period at the same time, before the supply of DC voltage and high-frequency power is sequentially stopped. At release of a semiconductor substrate A, the electric charge unevenly remaining at the semiconductor substrate A and a sample stage 5 is removed. So, inclination of the semiconductor substrate A when it is held is prevented. Thus, the supply period setting operation for high-frequency power after plasma process is simplified. A sample is held well at delivery.
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