发明名称 MICROSCOPIC METHOD USING CHARGED PARTICLE BEAM APPLICATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an electron optical system accomplishing a high resolution in a low acceleration area and providing high detection sensitivity for a secondary electron. SOLUTION: This microscopic method uses a charged particle source 1 and a charged particle beam application device carrying a sample inside. In the charged particle beam application device, a first charged particle beam 2 emitted from the charged particle source 1 is focussed by an objective lens 5 so as to irradiate the sample, a second charged particle 8 accelerated in a decelerating electric field, in which the first charged particle beam 2 is decelerated while the second charged particle generated from the sample is accelerated, is deflected by a deflector 10, and the second charged particle deflected by the deflector 10 is detected by a detector 9 arranged on the charged particle source side beyond the objective lens 5 for providing an image signal. In this way, the secondary charged particle can be deflected toward the detector without increasing a charged particle beam diameter even in a low acceleration area, so that a high resolution image can be provided by highly efficient detection.
申请公布号 JP2000149852(A) 申请公布日期 2000.05.30
申请号 JP19990344239 申请日期 1999.12.03
申请人 HITACHI LTD 发明人 KURODA KATSUHIRO
分类号 H01J37/28;H01J37/147;H01J37/244;(IPC1-7):H01J37/28 主分类号 H01J37/28
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