| 摘要 |
PROBLEM TO BE SOLVED: To facilitate formation of a ferroelectric capacitor by sandwiching a ferroelectric between upper and lower electrodes to form a capacitive element and embedding the lower electrode of the capacitive element in an underlying insulation film along with a ferroelectric film thereby eliminating the effect of reaction products and preventing trouble due to leakage current, or the like. SOLUTION: A semiconductor storage element employing ferroelectric is constructed by sandwiching a ferroelectric between upper and lower electrodes to form a capacitive element (framed part) wherein the lower electrode of the capacitive element is embedded substantially entirely in the trench of a buffer oxide film (silicon oxide film) while leaving a part thereof on the buffer oxide film and a ferroelectric film, (e.g. bismuth tantalite-strontium film) is embedded in the lower electrode. According to the structure, reaction products resulting from etching in storage element fabrication process are prevented from adhering to the side wall to cause short circuit and leakage current. |
