发明名称 |
Method of making low kappa dielectric inorganic/organic hybrid films |
摘要 |
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si-O-Si or Si-N-Si groups with organic side groups attached to the backbone.
|
申请公布号 |
US6068884(A) |
申请公布日期 |
2000.05.30 |
申请号 |
US19980067704 |
申请日期 |
1998.04.28 |
申请人 |
|
发明人 |
|
分类号 |
B32B9/04;C09D4/00;C23C16/30;C23C16/40;H01L21/312;H01L21/316;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):C23C16/00;C08J7/04 |
主分类号 |
B32B9/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|