| 摘要 |
PROBLEM TO BE SOLVED: To enable a magneto-resistance effect element to stably detect signal magnetic fields with high sensitivity by constituting its ferromagnetic layer which is not in contact with an antiferromagnetic layer of a soft magnetic film provided with a thin high-polarizability film on a tunnel barrier layer side and the soft magnetic film of NiFe. SOLUTION: A magneto-resistance effect element is constituted in such a way that a ferromagnetic tunnel junction structure is formed by interposing a tunnel barrier layer 14 between a fixed ferromagnetic layer 12 and a free ferromagnetic layer 13 and an antiferromagnetic layer 11 is arranged on the outside of one ferromagnetic layer 12. The ferromagnetic layer 12 which is not in contact with the antiferromagnetic layer 11 is constituted of a soft magnetic film 16 provided with a thin high-polarizability film 15 on the tunnel barrier layer 14 side. The soft magnetic film 16 is constituted of NixFe1-x (0.35<=x<=0.81) so that the film 16 may obtain a small coercive force of <=10 e. Therefore, the element can stably detect signal magnetic fields with high sensitivity and the practically required resistance value and signal output voltage characteristic of the element can be improved. |
