| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode having such a structure than can enhance breakdown voltage at the reverse recovery. SOLUTION: A groove is formed at the end of an anode p layer adjacent to a field limiting ring, and an anode electrode is provided only on the anode p layer inside the groove. The groove increases resistance in the current route of the anode p layer, thereby enhancing di/dt resistance. This diode includes a structure in which an n-type layer or a contact hole in place of a groove is formed. |
