SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE OF IT

摘要

PROBLEM TO BE SOLVED: To promote minuteness of non volatile memory cell. SOLUTION: A floating gate electrode 9 constituting a memory cell M comprising one transistor type cell is provided with a simple cross-section shape I of a single electrode material, and in order to increase the capacity with a control gate electrode 11, the control gate electrode 11 is provided with such cross-section shape II as to cover the side surface of the floating gate electrode 9.