发明名称 HEAT TREATMENT FURNACE OF WAFER
摘要 PROBLEM TO BE SOLVED: To allow an atmosphere gas to uniformly flow from upper to lower parts inside a reaction tube without generating convection in up and down directions, and to prevent a wafer from being contaminated when the wafer is heat-treated. SOLUTION: In the heat treatment oven where the supply and exhaust vents of an atmosphere gas are provided at the upper and lower parts respectively, of a reaction tube being heated by a heat source, a wafer to be heated is placed on a boat 8 for loading into the reaction tube, and heat treatment is made, the shape of the exhaust vent provided at the lower part of the reaction tube is in a long slit extended in a circumference direction, a back chamber 5 is provided at the outside, and one exhaust vent 6 with a larger opening area than the total area of the above slit opening part is provided in the back chamber 5. In this case, the slit-shaped exhaust vent of the reaction tube may be installed at two places or more in the circumference direction at even intervals.
申请公布号 JP2000150526(A) 申请公布日期 2000.05.30
申请号 JP19980314418 申请日期 1998.11.05
申请人 KOMATSU ELECTRONIC METALS CO LTD;KOMATSU LTD 发明人 SASAKI HIROSHI;YUKIWAKI SATOSHI;MATSUYAMA HIROYUKI;SATO MASAAKI;HANADA YOICHIRO;HIRAISHI YOSHINOBU
分类号 H01L21/31;H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/31
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