| 摘要 |
PROBLEM TO BE SOLVED: To prevent a gate oxide film from being damaged without sacrifice of charging damage suppressing effect by employing a structure where a gate electrode is connected directly with a protective diode through the upper layer metal of a two layer gate electrode. SOLUTION: A polysilicon layer 6 and a tungsten silicide layer 7 are patterned to form a gate electrode. Since a gate electrode is connected directly with protective diodes 4a, 4b through the tungsten silicide 7, charges being generated in the patterning and subsequent steps and applied to a gate oxide film 5 can be released to a P type silicon substrate 1. Since charges are prevented from concentrating on the gate oxide film 5, the gate oxide film 5 is protected against damage and thereby deterioration. Consequently, a stabilized threshold voltage can be formed in an MOS transistor.
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