发明名称 Process for forming diamond films by nucleation
摘要 PCT No. PCT/JP97/01992 Sec. 371 Date Feb. 3, 1998 Sec. 102(e) Date Feb. 3, 1998 PCT Filed Jun. 9, 1997 PCT Pub. No. WO97/47789 PCT Pub. Date Dec. 18, 1997A diamond film of this invention is formed from growth nuclei distributed on a substrate at a density of at least 1x1010 numbers/cm2, the film is dense, having flat surface and great freedom in the thickness of the continuous film. The growth nuclei can be distributed at such a high density by, for example, dispersing diamond grains of average diameter of no more than 0.1 mu m in an acid solution, and distributing the grains on a substrate immersed in the solution by any means including ultrasonic vibration and voltage application. Such techniques for nucleation are simple and excellent in repeatability. The diamond film is formed on the substrate using the diamond grains as the growth nuclei by the plasma CVD or any other techniques.
申请公布号 US6068883(A) 申请公布日期 2000.05.30
申请号 US19980011509 申请日期 1998.02.03
申请人 MATUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 DEGUCHI, MASAHIRO;KITABATAKE, MAKOTO;KUROKAWA, HIDEO;SHIRATORI, TETSUYA
分类号 C23C16/02;C23C16/27;C30B25/02;C30B25/10;C30B25/18;(IPC1-7):C23C16/26 主分类号 C23C16/02
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