发明名称 |
Photo sensor integrated circuit |
摘要 |
A photo diode and a signal processing circuit are formed on a silicon substrate. The signal processing circuit comprises a PNP transistor and an NPN transistor. A region of the signal processing circuit on the silicon substrate is covered by an aluminum thin film functioning as a shielding film. A covered distance L( mu m) is defined as an overhang of the aluminum thin film from the edge of the PNP transistor, and is determined based on a ratio of a minimum current of the PNP transistor, which induces malfunction in the signal processing circuit under the solar radiation, to a current generated in the circuit element when subjected to the solar radiation without the aluminum thin film.
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申请公布号 |
US6069378(A) |
申请公布日期 |
2000.05.30 |
申请号 |
US19970985043 |
申请日期 |
1997.12.04 |
申请人 |
DENSO CORPORATION |
发明人 |
TOYODA, INAO;SUZUKI, YASUTOSHI;INOUE, KEIJIRO |
分类号 |
H01L27/14;H01L27/144;H01L31/10;(IPC1-7):H01L31/062;H01L31/113;H01L31/020;H01L31/023 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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