| 摘要 |
PROBLEM TO BE SOLVED: To make electron density and distribution of plasma on a wafer face uniform by making he generation of interference of high-frequency power of each frequency difficult to occur. SOLUTION: A branching filter 1 is provided with an input terminal 12 of UHF frequency F1 power, an input terminal 13 of HF band frequency F2 power, an input terminal 14 of MF band frequency F3 power, and F1 and F2 synthetic power output terminal 7, and an output terminal of F3 power. Furthermore, the branching filter 1 is also provided with a UHF choke 8, a short-circuiting λ/4 choke 9, a UHF λ/4 short circuit line 10, and an MF series resonance circuit 11. Power of the MF band frequency F3 is inputted in an input terminal 6 of a plasma chamber 2 from the MF power output terminal 16 via a MF low pass filter 15 from the MF input terminal 14. F1 and F2 synthetic power is inputted in an input terminal 5 of the plasma chamber 2 from the output terminal 7. |
