发明名称
摘要 The preferred embodiment of the present invention overcomes the limitations of the prior art and provides a device and method to increase the robustness of electrostatic discharge (ESD) protection devices by reducing the temperature gradient caused by ESD pulses and reducing the likelihood of thermal runaway caused by large ESD pulses. The preferred embodiment forms implants under the trench isolation structures in the ESD devices. The implants reduce the current-caused heating that can lead to thermal runaway, and thus improve the robustness of the ESD protection device. In the preferred embodiment, the implants are formed using hybrid resist. The hybrid resist provides a method to form that implants that does not require additional masking steps or other excessive processing. Additionally, the hybrid resist provides implants that are self aligned with the well regions.
申请公布号 JP3045996(B2) 申请公布日期 2000.05.29
申请号 JP19980120845 申请日期 1998.04.30
申请人 发明人
分类号 H01L27/04;G03F7/004;H01L21/027;H01L21/329;H01L21/822;H01L21/8234;H01L27/02;H01L27/088;H01L29/10;H01L29/861;(IPC1-7):H01L21/329;H01L21/823 主分类号 H01L27/04
代理机构 代理人
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