摘要 |
<p>PROBLEM TO BE SOLVED: To provide a transfer technique which can lighten the dimensional dislocation of the transfer pattern arising in a semiconductor wafer, by reducing the projective distortion of the transfer pattern in photoreductive projective exposure. SOLUTION: The photo mask face corresponding to the transfer region of the optical system of a photoreductive projective aligner is divided into mesh at equal intervals of about 5 mm to 20 mm, and x and y corrections are set, with one point within one point within each mesh as a representative point, and the correction of the stage coordinate of a pattern drawer is performed by performing rectilinear approximation or curvilinear approximation with the correction between meshes. As a result, the dimension of an integrated pattern, which is made in the photo mask corresponding to the positional coordinate of the photomask, is distorted.</p> |