发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a transfer technique which can lighten the dimensional dislocation of the transfer pattern arising in a semiconductor wafer, by reducing the projective distortion of the transfer pattern in photoreductive projective exposure. SOLUTION: The photo mask face corresponding to the transfer region of the optical system of a photoreductive projective aligner is divided into mesh at equal intervals of about 5 mm to 20 mm, and x and y corrections are set, with one point within one point within each mesh as a representative point, and the correction of the stage coordinate of a pattern drawer is performed by performing rectilinear approximation or curvilinear approximation with the correction between meshes. As a result, the dimension of an integrated pattern, which is made in the photo mask corresponding to the positional coordinate of the photomask, is distorted.</p>
申请公布号 JP2000150347(A) 申请公布日期 2000.05.30
申请号 JP19980321053 申请日期 1998.11.11
申请人 HITACHI LTD 发明人 OKAMOTO YOSHIHIKO
分类号 H01L21/3205;G03F1/36;G03F1/68;G03F1/70;G03F7/20;H01L21/027;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/027;G03F1/08;H01L21/320 主分类号 H01L21/3205
代理机构 代理人
主权项
地址