| 摘要 |
FIELD: electronics. SUBSTANCE: method involves directing radiation to structure, which has metal layer, insulation gas dielectric layer, and wide-band insulating semiconductor crystal, to which DC voltage U is preliminary applied. Then, method involves measurement of amplitude and number of current pulses in external circuit of said structure. Goal of invention is achieved by choice of applied voltage U, which conforms to condition <EMI ID=0.1 HE=14 WI=89 TI=CHI>, where Ecr is critical intensity of electric field in gas dielectric layer (V/m), d0 is gas dielectric layer height (m), d1 is height of wide-band insulating semiconductor crystal (m), epsi0 is specific dielectric permeability of gas dielectric layer, epsi1 is specific dielectric permeability of wide- band insulating semiconductor crystal. EFFECT: possibility to detect intensity of pulse radiation simultaneously to measurement of radiation power (dose). 3 dwg, 3 ex
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