| 摘要 |
PROBLEM TO BE SOLVED: To remove a photoresist formed by using a mask or the resist residue remaining on an inorg. substrate after dry etching in the wiring process of a semiconductor device by incorporating a specified wt.% of an oxidizing agent and a specified wt.% of a chelating agent. SOLUTION: This peeling liquid for resist contains 0.1 to 60 wt.% of an oxidizing agent and 0.01 to 5 wt.% of a chelating agent. By using the peeling liquid, the photoresist or resist residue 6 remaining after dry etching the photoresist film applied on the inorg. base body 1, or the photoresist residue 6 remaining after ashing after dry etching can be easily removed in a short time. In this process, ultra microfabrication can performed while the wiring material is completely prevented from corrosion. Further, an org. solvent such as alcohol is not necessary for use as a rinsing liquid but the substrate can be rinsed only with water. Thus, circuit wirings of high accuracy can be produced.
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