| 摘要 |
PROBLEM TO BE SOLVED: To make maintainable the air tightness for a long time by forming an oxide film like a window frame in the periphery of an infrared ray transmitting window member, forming an oxide film having a corresponding shape thereto on a sensor housing opening, and bonding both films with a low m.p. glass. SOLUTION: A silicon oxide film 2 of about 1μm thick is formed in a parallel cross pattern on one surface of a Si wafer by sputtering. A photosensitive resin layer is formed on its formed surface, exposed through a photo mask, and developed to form a pattern, it is etched with hydrofluoric acid to remove the silicon oxide film 2 on an infrared ray transmitting window, using the pattern as a mask, the wafer is cut into chips of about 3×3 mm to form window members 3, a silicone oxide film 5 having a shape corresponding to the silicon oxide film 2 is formed on the periphery of an opening 4a of an infrared sensor housing 4, and the silicon oxide films 2 and 5 are bonded with a boric acid/lead- based low m.p. glass 6 at a baking temp. of about 453 deg.C for a baking time of about 10 min.
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