摘要 |
PROBLEM TO BE SOLVED: To form a low-resistance transparent electrical conductive film with an arc ion plating device. SOLUTION: Ar gas is introduced into a vacuum vessel 6, a high voltage is impressed between a cathode 2 and a hearth 7 (anode) from a DC power source 5 to cause a discharge, and a discharge plasma current 13 is generated. Subsequently, a film material 15 on the hearth 7 is evaporated and deposited on a substrate 12. In this case, an RF bias voltage is impressed on the hearth 7 from an RF power source 16 to cause a discharge.
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