LENS ABERRATION MEASURING METHOD, PHOTOMASK USED THEREFOR AND FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To shorten the measuring time of lens aberration of the projection lens in an aligner while increasing the yield of product. SOLUTION: The method for measuring lens aberration comprises a step for preparing a halftone phase shift mask, i.e., a photomask for inspection having an inspection pattern 2 formed by a film 6 for shielding the exposing light and a halftone phase shift film 1, a step for fixing the halftone phase shit mask to a reduction projection aligner and transferring the inspection pattern 2 to a resist film 3 by means of the reduction projection aligner, and a step for comparing the transferred inspection pattern 4 with a transfer reference pattern and detecting a pattern 5 being formed on the periphery of the pattern 4 by the halftone phase shift film 1 when the aligner has a coma. According to the method, coma of the projection lens in the reduction projection aligner can be measured automatically.