| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the inside stress of a vapor deposition film, to eliminate the peeling of an Mo vapor deposition film and to improve the yield of the product by forming an Mo vapor deposition film while H2O or N2 is introduced into a vapor depositing tank in the process of Mo vapor deposition. SOLUTION: Vapor deposition is executed preferably at the substrate temp. of >=300 deg.C in a high vacuum of <=1×10-5 Pa to produce a low stress Mo vapor deposition film. The inside of a vapor depositing tank 11 is provided with a substrate holder 12 capable of freely rotating and revolving by a rotating and revolving jig 13. A substrate is placed on the substrate holder 12, and, while H2O or N2 is introduced into the vapor depositing tank 11 via a gas introducing nozzle 14, vapor deposition is executed by an electron beam gun 15. A shutter 16 is provided in front of the electron beam gun 15, and moreover, the inside of the vapor depositing tank 11 is provided with a heating means 17 such as a lamp heater 17 and a film thickness sensor 18. The introducing passage of gas is provided with a mass flow controller 19, the gas flow rate is controlled by the output of an ion gauge, and the pressure in the process of the vapor deposition can be held to a constant one.</p> |
