APPARATUS FOR INSPECTING APPEARANCE OF PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To analyze the defect mode of a mask pattern at an exposure wavelength which is actually used for pattern transfer to the top of a wafer. SOLUTION: A photomask pattern S1 is inputted and transformed into mask pattern data S4, while a CAD pattern S5 is transformed into mask pattern data S7. Optical conditions S9 including the wavelength of light for exposure are inputted to both mask pattern data, and light intensity distribution data S10 and S11 obtained by optical simulation S8 are compared and evaluated S12 to identify defects in the photomask and to specify the defect positions. The light intensity distribution data of the defect positions are subjected to defect mode analysis S13 to analyze the defect mode and a defect information data base S15 is formed.