| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a dielectric thin film good in ferroelectric characteristics, also small in leakage current density and long in an elemental life, in the process of thin film deposition on a substrate or after the completion of the deposition, by irradiating the thin film with energy beams in a pulse shape and thereby refining and densifying the size of crystal grains in the thin film. SOLUTION: On a substrate 2 set to a holder 1, a sputtering target 3 composed of constitutional elements same as those of a desired dielectric thin film is sputtered by argon ions to deposit a thin film. At the time of the dielectric thin film deposition or after the deposition, energy beams 5 irradiates so as to be chopped with a shutter 6. In this way, the irradiation of the pulselike energy beams is made small to generate dense grains, by which the size of the crystal grains in the thin film can be refined and densified. Its ferroelectric characteristics are satisfactory, the leakage current density therein is also small, and the elemental life can be prolonged. |
