| 摘要 |
PROBLEM TO BE SOLVED: To control the direction of film forming particles moving from a target to a semiconductor wafer and to improve the uniformity of film formation in the semiconductor wafer face by controlling the sputtering ratio of each target arranged oppositely to a substrate in a treating chamber and plurally divided coaxially. SOLUTION: Gaseous argon is introduced into a treating chamber 14 in which the pressure is reduced to a prescribed one, and voltage is applied to a space between a target 17 and a pedestal 18 to generate plasma. The argon ions in the plasma are collided against the lower face of the target 17, and the target atoms are deposited on a substrate 12 to obtain a thin film. As to a magnetron device 22 arranged for increasing the density of the plasma, a base plate 26 having plural magnet units 24 is rotated by a driving unit 28. In this way, the erosion of each target 17 is made uniform, the magnetic force of the magnet unit 24 is controlled to separately control the sputtering ratio, a shield ring is provided, and the plasma is confined to attain the uniformity of the film.
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