| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the discrimination between P type and N type by separating semiconductor samples having an extremely high carrier density from those depleted, when they are analyzed. SOLUTION: This device has a means 16 for causing a conductive probe 12 to scan over a specimen 11, a means 13 for placing a bias voltage between the specimen 11 and the conductive probe 12, a means 14 for converting a change of capacitance between the specimen 11 and the conductive probe 12 into a change of voltage, and a means for detecting a phase relation between the bias voltage and the changed voltage signal. By providing this device with the means for detecting a phase relation between a change of capacitance and a bias voltage, a scanning capacitance microscope can be realized considerably facilitating the discrimination between P type and N type and the determination of a depletion layer domain when a semiconductor device is analyzed. This can be used as a very powerful tool for development of sub-micron devices.
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