发明名称 FORMATION OF FLAT FACE ON ATOMIC SCALE IN SURFACE OF METALLIC SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a flat face on an atomic scale in the surface of a metallic substrate by an electrochemical method capable of flattening on an electronic level having a practically requred width. SOLUTION: This is a method for forming a flat face on an atomic scale in the surface of a metallic substrate, and (a) a stage in which a metallic substrate is set to the inside of an ionic soln., (b) a stage in which the potential of the metallic substrate is repeatedly sweeped between that equal to or above the oxidation porential and that equal to or below the reduction potential at a certain potential operating rate for prescribed times, (c) a stage in which it is treated for a presribed time at the potential equal to or below the oxidation potential and close to the oxidation potential and (d) a stage in which the (b) and (c) stages are repeatedly executed for plural times are performed.
申请公布号 JP2000144500(A) 申请公布日期 2000.05.26
申请号 JP19980315048 申请日期 1998.11.05
申请人 JAPAN SCIENCE & TECHNOLOGY CORP 发明人 HARA SHIGETA;HIRAI NOBUMITSU
分类号 C25D5/18;C25D7/12;C25F3/00;C25F3/16;(IPC1-7):C25F3/00 主分类号 C25D5/18
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