发明名称 SELF-SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a self-sputtering method capable of stable shift to self- sputtering. SOLUTION: This method is a self-sputtering method in which, by the particles to be sputtered from a target 16 arranged in a vacuum chamber 12, the particles to be sputtered from the target 16 are produced and is provided with a feeding stage in which process gas is fed into the vacuum chamber 12, a plasma stage in which the process gas is plasmatized in the region in the vicinity of the erosion face 16a of the target 16, a magnetic field generating stage in which the magnetic field B along the reference axis approximately orthogonal to the erosion face 16a is generated on the region in the vacuum chamber 12 different from the vicinity of the erosion face 16a. The plasmatization of the process gas and the ionization of the particles to be sputtered are executed so as to be separated timewise and spacially.
申请公布号 JP2000144412(A) 申请公布日期 2000.05.26
申请号 JP19980310641 申请日期 1998.10.30
申请人 APPLIED MATERIALS INC 发明人 WADA YUICHI
分类号 H01L21/203;C23C14/35;H01L21/285;(IPC1-7):C23C14/35 主分类号 H01L21/203
代理机构 代理人
主权项
地址