MANUFACTURE OF THIN COMPOUND FILM

摘要

PROBLEM TO BE SOLVED: To effectively prevent the dissipation of a chalcogenite element during film formation and to obviate the necessity of heat treatment, selenizing treatment, sulfidizing treatment, or the like, after film formation. SOLUTION: At the time of depositing a thin film of chalcophylite type compound on a substrate by vacuum vapor deposition or sputtering, a thin compound film during deposition is irradiated with a first ion beam containing an chalcogenite element (Se or S) at <=300 V accelerating voltage. Simultaneously, the thin film is also irradiated whit a second ion beam consisting of a rare gas element (Ar, Kr, Xe, or the like) having larger mass than Ne at 100-300 V accelerating voltage.