Crystal growth from a melt, especially for growing large silicon carbide or aluminum nitride crystals useful for large power electronic components, comprises lateral growth from grown crystal tips of the material on a substrate

摘要

Crystalline material growth from a melt, involves lateral growth from grown crystal tips of the material (100) on a substrate. Crystalline material growth from a melt onto a solid first material (100) comprises: (a) growing the first material (100) on a substrate of a second material (200); (b) growing crystal tips of the first material (100) from the interface between the first material (100) and the melt; and (c) growing crystals from the tips in the lateral direction in a plane parallel to the free surface of the melt. Preferred Features: The tips are grown under a temperature gradient and lateral growth is initiated by reversing the direction of the temperature gradient.